مقایسه مشخصات گذرا بین ترانزیستورهای تونلی،شاتکی و ماسفتی
در صورت نوشتن نرم افزار بند ۱ ، می توان از این نرم افزار برای بررسی مشخصات گذرای افزاره های دیگر نیز بهره برد.

منابع:
[۱] M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation, New York: Springer-Verlag, 2006.
[۲] Gengchiau Liang, Neophytos Neophytou, Dmitri E. Nikonov, and Mark S. Lundstrom, Theoretical study of Graphene Nanoribbon Field-Effect Transistors, Technical Proceedings of NSTI Nanotechnology Conference and Trade Show, vol.1, May 2007.
[۳] Gengchiau, Neophytos Neophytou, Dmitri E. Nikonov, and Mark S. Lundstrom, Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors,
IEEE Trans. Electr. Dev. vol. 54, pp. 677-682, 2007.
[۴] Fujita M., Wakabayashi K., Nakada K. and Kusakabe K., Peculiar Localized State at Zigzag Graphite Edge, J. Phys. Soc. Jpn. Vol.65, pp. 1920-1923 ,1996.
[۵] Nakada K., Fujita M., Dresselhaus G., and Dresselhaus M.S., Edge state in Graphene ribbons: Nanometer size effect and edge shape dependence, Physical Review B, vol. 54, pp. 17954–۱۷۹۶۱, ۱۹۹۶.
[۶] Zhixin Guo, Dier Zhang, and Xin-Gao Gong, Thermal conductivity of Graphene nanoribbons, Applied physics letters, vol.95, pp. 163103-163106, 2009.
[۷] Azad Naeemi and James D. Meindl, Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects, IEEE Electron Device Letters, vol. 28,pp. 428-431, May 2007.
[۸] X. Li, H. Dai, Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors, Science, vol. 319, pp. 1229-1232, 2008.
[۹] Iang, Q.,et.al., Superconducting Switch Made of Graphene Nanoribbon Junctions, Nanotechnology ,vol.19 , pp.355706-355713, 2008.
[۱۰] Yijian Ouyang, Youngki Yoon, and Jing Guo, Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study IEEE Transactions on Electron Devices, Vol. 54, pp. 2223-2231, September 2007.
[۱۱] Dr. Lei Liao , Jingwei Bai, Yungchen Lin, Dr. Yongquan Qu, Prof. Yu Huang, and Prof. Xiangfeng Duan, High Performance Top-Gated Graphene Nanoribbon
Transistors Using Zirconium Oxide Nanowires as High-k Gate Dielectrics, Adv Mater.,vol.22, pp. 1941–۱۹۴۵, May 2010 .
[۱۲] S. Luryi, Quantum capacitance devices, Appl. Phys. Lett., vol. 52, pp. 501–۵۰۳, Feb.1988.
[۱۳] A. Rahman, J. Guo, S Datta, and M. Lundstrom, Theory of ballistic nanotransistors,IEEE Trans. Electron Devices, vol. 50, pp. 1853-1164, Sep. 2003.
[۱۴] M. R. Choudhury et al.., Technology exploration for Graphene nanoribbon FETs, in Proc. Design Automation Conference, pp. 272–۲۷۷, ۲۰۰۸.
[۱۵] Khairul Alam, Transport and performance of a zero-Schottky barrier and doped contacts graphene nanoribbon transistors, Semicond. Sci. Technol., vol.24, pp, 015007-015022, 2009.
[۱۶] Youngki Yoon, Gianluca Fiori, Seokmin Hong, Giuseppe Iannaccone, and Jing Guo,Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs, IEEE Trans. Electron Devices, vol. 55, pp. 2314–۲۳۲۳, Sep. 2008.
[۱۷] M. Y. Han et al., Energy band-gap engineering of graphene nanoribbons,Physical Review Letters, vol. 98, p. 206805-206808, 2007.
[۱۸] D. Basu et al., Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors, Applied Physics Letters, vol. 92, p. 042114, 2008.
[۱۹] Y. Yoon and J. Guo, Effect of edge roughness in graphene nanoribbon transistors,Applied Physics Letters, vol. 91, p. 073103, 2007.
[۲۰] Yijian Ouyang, Youngki Yoon, and Jing Guo, Edge Chemistry Engineering of Graphene Nanoribbon Transistors: A Computational Study, IEEE Trans. Electr. Dev.,

2008. 2008. ۱-۴, ۲۰۰۸.

[۲۱] Yijian Ouyang, Hongjie Dai, and Jing Guo1 Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material, Nano Res, vol. 3, pp. 8–۱۵, ۲۰۱۰.
[۲۲] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, Rev., Modern Phys., 81 (2009).
[۲۳] K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva and A. Firsov, Science, 306 (2004).